| 摘要 |
A method for forming an aluminium metal wire is provided to prevent penetration of photoresist applied in a subsequent process by forming a TiN layer on an upper layer of an aluminium wire layer and performing a plasma process on it to remove non-coupling region of grain boundary within the TiN layer. A dielectric(102) is formed on a semiconductor substrate(100). A Ti/TiN layer(104a,104b), an aluminium wire layer(106), and a TiN layer are sequentially formed on an upper portion of the dielectric. A plasma process is performed on the TiN layer to remove a non-coupling region within the TiN layer. A photoresist pattern is formed on an upper portion of the TiN layer where the plasma process is performed. The plasma processed TiN layer, the aluminium layer, and the Ti/TiN layer sequentially etched by using the photoresist pattern as an etching mask to form an aluminium metal wire.
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