METHOD FOR MANUFACTURING OF CMOS IMAGE SENSOR

摘要

A method of fabricating a CMOS image sensor is provided to improve character of an image sensor by minimizing character variation of a transfer transistor. A gate insulation layer is deposited on a semiconductor substrate to form a gate electrode. The semiconductor substrate has an active region defined as a photo diode region and a transistor region. A first impurity region is formed on a part of the gate region in the transistor region. A photoresist layer is deposited on the semiconductor substrate and is patterned to cover the transistor region by using exposure and developing process. The gate electrode is covered by reflowing the patterned photoresist at a predetermined temperature. A second impurity region is formed on the other side of photo diode region of the gate electrode by using the reflowing photoresist as a mask. A sidewall isolation layers are formed both sides of the gate electrode after removing the photoresist. A third impurity region is formed on one part of the gate electrode where the first impurity region is formed. A fourth impurity region is formed on the other part of the gate electrode.