| 摘要 |
A semiconductor device includes a semiconductor substrate, a cell region in a surface portion of the substrate for operating as a transistor, a gate lead wiring region having a gate lead pattern on the substrate, a trench in the surface portion of the substrate extending from the cell region to the gate lead wiring region, an oxide film on an inner surface of the trench, and a gate electrode in the trench insulated with at least the oxide film from the substrate. A speed of formation of a main portion of the sidewalls of the trench at the gate lead wiring region is greater than that of a main portion of the sidewalls of the trench at the cell region, so that a thickness of the oxide film at the gate lead wiring region is greater than that at the cell region.
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