| 摘要 |
The sequence in which the voltages (V<SUB>SL</SUB>, V<SUB>DL</SUB>, V<SUB>SG</SUB>, and V<SUB>CL</SUB>) applied to the source/drain regions (S and D), select gate (SG), and (if present) control gate (CG) of a floating-gate field-effect transistor ( 20 ) start to change value during a programming operation is controlled so as to avoid adjusting the transistor's programmable threshold voltage toward a programmed value when the transistor is intended to remain in the erased condition, i.e., not go into the programmed condition. With the voltage (V<SUB>SL</SUB>) at one source/drain region (S) changing from a nominal value to a programming value, the sequence entails causing the voltage (SG) at the select gate to start changing from a nominal value to a programming-enable value after the voltage at the other source/drain region (D) starts changing from a nominal value to a programming-inhibit value.
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