| 发明名称 |
Contact structure of semiconductor device and method of forming the same |
| 摘要 |
A contact structure of a semiconductor includes a substrate, a conductive doping layer having an opposite polarity to that of the substrate, the conductive doping layer being formed in the substrate, a conductive layer formed on the conductive doping layer, and an insulation doping layer formed under the conductive doping layer in the substrate.
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| 申请公布号 |
US7125797(B2) |
申请公布日期 |
2006.10.24 |
| 申请号 |
US20040915538 |
申请日期 |
2004.08.11 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JUN-YOUNG;CHOI BYOUNG-LYONG;LEE EUN-KYUNG |
| 分类号 |
H01L21/44;H01L29/41;H01L21/20;H01L21/265;H01L21/28;H01L21/283;H01L21/285;H01L21/316;H01L21/318;H01L21/768;H01L21/82;H01L21/8238;H01L23/48;H01L23/52;H01L27/04;H01L29/08;H01L29/78 |
主分类号 |
H01L21/44 |
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