发明名称 |
Method for forming hybrid device gates |
摘要 |
A method for forming self-aligned contact devices in a core region of a semiconductor substrate and non-self-aligned contact devices in a non-core region of the semiconductor substrate is disclosed in which a single gate film stack is used for forming gate structures in both the core region and in the non-core region. A dielectric layer is formed over a semiconductor substrate and a gate film stack is formed over the dielectric layer. The gate film stack is then patterned so as to form gate structures within both the core region and the non-core region. |
申请公布号 |
US7125775(B1) |
申请公布日期 |
2006.10.24 |
申请号 |
US20040805124 |
申请日期 |
2004.03.18 |
申请人 |
INTEGRATED DEVICE TECHNOLOGY, INC. |
发明人 |
WANG KUILONG;SYAU TSENGYOU;CHOI JEONG |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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