Etching method using photoresist etch barrier

摘要

A method of etching is disclosed using a photoresist etch barrier formed by an exposure with a light source of which wavelength is in the range of 157 nm to 193 nm, such as an argon fluoride(ArF) laser or fluorine laser(F₂ laser), the method includes the steps of coating a photoresist layer on a etch target layer; forming photoresist pattern by developing the photoresist layer after exposing the photoresist layer with a light source of which wavelength is in the range of 157 nm to 193 nm; forming a polymer layer and etching a portion of the etch target layer simultaneously with a mixture of fluorine-based gas, an Ar gas and an O₂ gas, wherein the fluorine-based gas is C_xF_y or C_aH_bF_c, and wherein x, y, a, b and c range from 1 to 10, respectively; and etching the etch target layer using the polymer layer and the photoresist pattern as the etch mask.