发明名称 Fabrication method for microstructures with high aspect ratios
摘要 A fabrication method for microstructures with high aspect ratios uses a CMOS process to form a desired microstructure on a silicon substrate. The steps of forming a contact plug and a via plug of the process are used to form etching channels in insulation layers, polysilicon layers and metal layers, penetrating to the silicon substrate. An etching process is then performed through the etching channel to form the desired microstructure with high aspect ratio.
申请公布号 US7125795(B2) 申请公布日期 2006.10.24
申请号 US20040992709 申请日期 2004.11.22
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 KUO NAI-HAO;YEN KAI-HSIANG;CHIOU JING-HUNG;TSAI PO-HAO;LEE YUH-WEN
分类号 H01L21/4763;B81C99/00;G01P15/08;H01L21/8238 主分类号 H01L21/4763
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