| 摘要 |
A low-noise CMOS active pixel for image sensors comprises a photosensitive element (PD), a feedback capacitive element (CF) with a capacitance C<SUB>F</SUB>, and four transistors, namely a first transistor (M 1 ), two reset transistors (M 3 , M 4 ) and one pixel selection transistor (M 2 ). These components are laid out and controlled in such a way that the first transistor (M 1 ) is mounted as an amplifier during the pixel reset phase and as a follower during the read phase. The reset transistors (M 3 , M 4 ) are parallel-connected so that one of them (M 4 ) compensates for the negative effects of the other transistor (M 3 ) on the node common to the two transistors.
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