发明名称 |
Nitride based semiconductor laser diode device with a bar mask |
摘要 |
A nitride based semiconductor laser diode device comprising a selective growth mask with a grating structure is proposed. The island-like stacked epitaxial layers including the P-type cladding layer is formed from the selective growth mask upon the active layer of the semiconductor laser structure. This proposed structure can reduce the strain by the deformation due to the isolate structure. Thus, increase of thickness of the cladding layer and/or increase of composition difference can be achieved without crack existing in the island-like stacked epitaxial layers. The optical confinement can be effectively improved.
|
申请公布号 |
US7126972(B2) |
申请公布日期 |
2006.10.24 |
申请号 |
US20030250200 |
申请日期 |
2003.06.12 |
申请人 |
CHUNG-SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
LAN WEN-HOW;SHIANG YUH-DER;LIN JIA-CHING;LIN KER-JUN;PERNG KAI-FUNG;CHERNG YA-TUNG |
分类号 |
H01S3/04;H01L21/00;H01S3/20;H01S5/00;H01S5/02;H01S5/32;H01S5/323 |
主分类号 |
H01S3/04 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|