| 发明名称 |
Method and device for processing substrate, and apparatus for manufacturing semiconductor device |
| 摘要 |
A substrate processing method includes the step of removing carbon from a silicon substrate surface and planarizing the silicon substrate surface from which carbon has been removed.
|
| 申请公布号 |
US7125799(B2) |
申请公布日期 |
2006.10.24 |
| 申请号 |
US20040473205 |
申请日期 |
2004.04.09 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
AOYAMA SHINTARO;IGETA MASANOBU;SHINRIKI HIROSHI;TAKAHASHI TSUYOSHI |
| 分类号 |
H01L21/44;H01L21/00;H01L21/02;H01L21/28;H01L21/302;H01L21/304;H01L21/306;H01L21/3065;H01L21/314;H01L21/316;H01L29/51;H01L29/78 |
主分类号 |
H01L21/44 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
