| 发明名称 |
Multi-step chemical mechanical polishing of a gate area in a FinFET |
| 摘要 |
A method of manufacturing a MOSFET type semiconductor device includes planarizing a gate material layer that is deposited over a channel. The planarization is performed in a multi-step process that includes an initial "rough" planarization and then a "fine" planarization. The slurry used for the finer planarization may include added material that tends to adhere to low areas of the gate material.
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| 申请公布号 |
US7125776(B2) |
申请公布日期 |
2006.10.24 |
| 申请号 |
US20050030191 |
申请日期 |
2005.01.07 |
| 申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
ACHUTHAN KRISHNASHREE;AHMED SHIBLY S.;WANG HAIHONG;YU BIN |
| 分类号 |
H01L21/336;C09G1/02;H01L21/00;H01L21/3105;H01L21/321;H01L21/84;H01L29/423;H01L29/49;H01L29/786 |
主分类号 |
H01L21/336 |
| 代理机构 |
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