发明名称 |
METHOD OF TREATING INORGANIC OXIDE FILM, ELECTRONIC DEVICE SUBSTRATE, METHOD OF MANUFACTURING ELECTRONIC DEVICE SUBSTRATE, LIQUID CRYSTAL PANEL, AND ELECTRONIC APPARATUS |
摘要 |
A method of treating an inorganic oxide layer, an electronic device substrate, a method of manufacturing an electronic device substrate, a liquid crystal panel, and an electronic device are provided to obtain high reliability of the liquid crystal panel and the electronic device by achieving chemical bonding between alcohol and a surface of the inorganic oxide layer and also an inner surface of a fine hole of the inorganic oxide layer. An inorganic oxide layer(31) formed by rhombic deposition and having a plurality of fine holes(30) is submerged in a treatment solution containing alcohol. A surface including the treatment solution is decompressed to penetrate the treatment solution in the fine holes of the inorganic oxide layer. The alcohol is chemically bonded with the surface of the inorganic oxide layer and inner surfaces of the fine holes. |
申请公布号 |
KR20060110222(A) |
申请公布日期 |
2006.10.24 |
申请号 |
KR20060034939 |
申请日期 |
2006.04.18 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
SHINOHARA YUJI;TERAO KOICHI |
分类号 |
G02F1/1337 |
主分类号 |
G02F1/1337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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