发明名称 |
METHOD OF TREATING INORGANIC OXIDE FILM, ELECTRONIC DEVICE SUBSTRATE, METHOD OF MANUFACTURING ELECTRONIC DEVICE SUBSTRATE, LIQUID CRYSTAL PANEL, AND ELECTRONIC APPARATUS |
摘要 |
A method of treating an inorganic oxide layer, an electronic device substrate, a method of manufacturing an electronic device substrate, a liquid crystal panel, and an electronic device are provided to improve an alignment property of liquid crystals of the electronic device substrate and prevent lowering of the alignment property by allowing chemical bonding of alcohol with not only a surface of the inorganic oxide layer but also an inner surface of a fine hole of the inorganic oxide layer. An inorganic oxide layer(31) formed by a rhombic deposition method and having a plurality of fine holes is submerged in a treatment solution containing at least first alcohol and second alcohol having smaller molecular weight than that of the first alcohol. A space including the treatment solution is decompressed to penetrate the treatment solution in fine holes of the inorganic oxide layer. Alcohol of the treatment solution is chemically bonded with a surface of the inorganic oxide layer and inner surfaces of the fine holes. |
申请公布号 |
KR20060110223(A) |
申请公布日期 |
2006.10.24 |
申请号 |
KR20060034970 |
申请日期 |
2006.04.18 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
TERAO KOICHI;SHINOHARA YUJI |
分类号 |
G02F1/1337 |
主分类号 |
G02F1/1337 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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