| 摘要 |
An electronic memory, typically a flash EPROM, contains an array of memory sections ( 40 ), each containing an array of memory cells ( 54 ). Global bit lines ( 60 ) fully traverse the memory. Local bit lines ( 58 ) partially traverse the memory. Data stored in the memory is sensed with an arrangement that utilizes impedance matching to achieve high sensing accuracy with low noise sensitivity. The impedance matching may be provided solely from the sections and lines of the memory or partially from a separate reference memory section ( 102 ) that contains reference memory cells ( 104 ).
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