METHOD OF PATTERNING PHASE CHANGE MATERIAL THIN FILM AND METHOD OF MANUFACTURING PHASE CHANGE MEMORY DEVICE USING THE SAME

摘要

A method for patterning a phase change material thin film and a method for manufacturing a phase change memory device are provided to form the phase change memory device of a hyperfine low consumption type by wet etching. An amorphous phase change material film is formed. The phase change material film is crystallized by supplying heat energy. The phase change material film is crystallized from the phase change material film having the amorphous state by performing a heating process for manufacturing the phase change memory device by selectively wet etching process. A portion of the phase change material film is non-crystallized by applying heat energy to a portion of the crystallized phase change material film. A crystallized portion of the phase change material film is removed by wet etching. So the phase change material thin film pattern is formed which comprises an amorphous portion of the phase change material thin film.