发明名称 ELECTRON EMISSION DEVICE AND METHOD OF MANUFACTURING THE SAME
摘要 <p>An electron emission device and a method for manufacturing the same are provided to prevent a malfunction of an electron emission device by improving an insulating characteristic between a cathode electrode and a gate electrode. A cathode electrode(11) is formed on a substrate(10). An insulating layer(12) is formed on a substrate in order to cover the cathode electrode. A sacrificial layer is formed on the insulating layer. An opening is formed at the sacrificial layer by patterning the sacrificial layer. An opening(12a) is formed at the insulating layer by etching an exposed part of the insulating layer. The sacrificial layer is removed therefrom. An organic material is removed from a wall face of the opening of the insulating layer in order to form the wall face of the opening of the insulating layer as a smooth inclined profile. A gate electrode(14) having an opening is formed on the insulating layer.</p>
申请公布号 KR20060110122(A) 申请公布日期 2006.10.24
申请号 KR20050032340 申请日期 2005.04.19
申请人 SAMSUNG SDI CO., LTD. 发明人 JUNG, KYU WON;KIM, IL HWAN
分类号 H01J1/30 主分类号 H01J1/30
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