MIM CAPACITOR AND MANUFACTURING METHOD OF IT

摘要

An MIM capacitor and a manufacturing method thereof are provided to obtain high Q-factor characteristics by using low resistances of upper and lower electrodes. An MIM capacitor comprises a lower electrode, an insulating layer, and an upper electrode. The lower electrode is composed of a first tantalum nitride layer(20) connected to a minus connection line and a first alpha-tantalum layer(30) on the first tantalum nitride layer. The insulating layer(40) is formed on the first alpha-tantalum layer. The upper electrode is formed on the insulating layer. The upper electrode is composed of a second tantalum nitride layer(50) and a second alpha-tantalum layer(60) connected to a plug connection line.