METHOD OF FORMING A SEMICONDUCTOR DEVICE HAVING STACKED TRANSISTERS

摘要

A method for forming a semiconductor device with stacked transistors is provided to minimize the resistance of a common contact and to improve a device speed by using an improved ohmic layer structure. A plurality of interlayer dielectrics and semiconductor single crystal layer interposed between the interlayer dielectrics are formed on a semiconductor substrate(100). A common contact hole for exposing partially the substrate to the outside is formed on the resultant structure by using an etching process. A first ohmic layer(162) is formed on the resultant structure to cover a sidewall of the semiconductor single crystal layer in the common contact hole. A second ohmic layer(166) is formed on the resultant structure to cover the exposed portion of the substrate at a bottom of the common contact hole. A common contact plug is filled in the common contact hole.