发明名称 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
摘要 A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X½)<=X2<=(3*X¼) and (X½)<=X3<=(3*X¼).
申请公布号 KR100636722(B1) 申请公布日期 2006.10.23
申请号 KR20040099132 申请日期 2004.11.30
申请人 发明人
分类号 H01L21/60;H01L21/28;H01L21/768;H01L23/02;H01L23/48;H01L23/485;H01L23/52 主分类号 H01L21/60
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