发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
摘要 |
A semiconductor device includes a semiconductor substrate and an array of protruding electrodes arranged at a pitch X1. Each of the protruding electrodes has a height X3 and is formed on a barrier metal base of diameter X2 coupled to an electrode arranged on the semiconductor substrate so as to satisfy the relations (X½)<=X2<=(3*X¼) and (X½)<=X3<=(3*X¼). |
申请公布号 |
KR100636722(B1) |
申请公布日期 |
2006.10.23 |
申请号 |
KR20040099132 |
申请日期 |
2004.11.30 |
申请人 |
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发明人 |
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分类号 |
H01L21/60;H01L21/28;H01L21/768;H01L23/02;H01L23/48;H01L23/485;H01L23/52 |
主分类号 |
H01L21/60 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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