METHODS OF FORMING A MAGNETIC MEMORY DEVICE

摘要

A method for forming a magnetic memory device is provided to improve an etch selectivity between a removed portion of an upper magnetic layer and a tunnel barrier layer by oxidizing selectively the upper magnetic layer using a capping conductive pattern as an oxidation mask. A lower magnetic layer, a tunnel barrier layer(130a) and an upper magnetic layer are sequentially formed on a semiconductor substrate(100). A capping conductive pattern is formed on a predetermined region of the upper magnetic layer. An oxidation is performed on the upper magnetic layer by using the capping conductive pattern as an oxidation mask. At this time, an upper magnetic pattern(132a) is formed under the capping conductive pattern. The tunnel barrier layer and the upper magnetic pattern are selectively exposed to the outside by removing completely an oxidized portion from the upper magnetic layer. The upper magnetic layer contains at least one selected from a group consisting of Fe, Ni, and Co.