发明名称 |
MATERIALS AND METHODS FOR LOW PRESSURE CHEMICAL-MECHANICAL PLANARIZATION |
摘要 |
Provided are materials and methods for the chemical mechanical planarization of material layers using a down force of less than about 2.5 psi while maintaining a material removal rate generally similar to that obtained using higher down forces while simultaneously improving the selectivity of the process with respect to a primary material formed over a barrier material. The materials and methods disclosed herein are suitable for use in metallization operations during semiconductor device fabrication, in particular in processes in which the primary material is a softer metal such as copper and the barrier material is a harder material such as a metal nitride.
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申请公布号 |
KR20060109897(A) |
申请公布日期 |
2006.10.23 |
申请号 |
KR20067009043 |
申请日期 |
2006.05.10 |
申请人 |
DOW GLOBAL TECHNOLOGIES INC. |
发明人 |
BALIJEPALLI SUDHAKAR;ALDRICH DALE J.;GRIER LAURA A.;MILLS MICHAEL E. |
分类号 |
B24B37/04;B24B49/16;B24B53/007 |
主分类号 |
B24B37/04 |
代理机构 |
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