NON-VOLATILE MEMORY DEVICE HAVING NANO TUBES

摘要

A nonvolatile memory device is provided to enhance erase efficiency by using at least one or more nano tubes. A nonvolatile memory device comprises a floating gate on a semiconductor substrate(200), a control gate(250) on the floating gate, an insulating layer(240) interposed between the floating gate and the control gate, and at least one or more nano tubes. The nano tubes(230) are formed in the insulating layer. The nonvolatile memory device further includes source/drain regions, wherein the source/drain regions are formed in the substrate. A carbon nano tube is used as the nano tube. The carbon nano tube is formed by performing a catalyst growth using Co or Ni as a catalyst.