| 摘要 |
A semiconductor device is provided to reduce damage to the surface of a gate caused by a polishing process by performing a wet etch process after a hard mask is partially left on the gate. A gate(30) is formed on a substrate(10), made of silicide. A spacer(20b) is formed on the sidewall of the gate. A source/drain(22) are formed on the substrate, made of a epitaxially grown silicon layer. The gate protrudes more than the spacer. Silicide(24) is formed on the source/drain, made of nickel silicide.
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