| 摘要 |
A method for manufacturing a semiconductor device is provided to prevent diffusion of impurities to a gate in ion implantation to reduce contact resistance by forming a spacer on a sidewall of a contact hole after a part of a substrate is etched. An interlayer dielectric(60) is formed on a semiconductor substrate(10) having a gate(30) and a source/drain region(50). The interlayer dielectric is etched to form a contact hole(70) exposing the source/drain region of the substrate. The exposed source/drain region of the substrate is etched. A spacer(40) is formed on a sidewall of the contact hole. An epi silicon layer(90) is selectively formed on the etched substrate part. Impurity is implanted into a surface of the epi silicon layer to lower contact resistance. A bit line(100) is formed on the interlayer dielectric including the contact hole.
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