Method for Manufacturing Three-Dimensional FinFET Transistor Having Additional Gate and Structures Thereof,申请号KR20040078642-传众专利搜索

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发明名称	Method for Manufacturing Three-Dimensional FinFET Transistor Having Additional Gate and Structures Thereof
摘要
申请公布号	KR100636015(B1)	申请公布日期	2006.10.20
申请号	KR20040078642	申请日期	2004.10.04
申请人		发明人
分类号	H01L21/335	主分类号	H01L21/335
代理机构		代理人
主权项
地址

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