| 发明名称 |
NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
<P>PROBLEM TO BE SOLVED: To decrease an ohmic contact resistance to an n-type semiconductor layer in a semiconductor light emitting device using a III-V nitride-based compound semiconductor to enable a low-voltage operation. <P>SOLUTION: A nitride semiconductor light emitting device includes: an MQW active layer 104 formed of a first III-V nitride semiconductor; an n-type contact layer 103 formed of In<SB>x</SB>Al<SB>y</SB>Ga<SB>1-x-y</SB>N (0<x<1, 0<y<1, 0<x+y<1) on one of the mutually opposed surfaces of the MQW active layer 104, the n-type contact layer 103 being a mixed crystal layer having an n-type conductivity; and an n-side electrode 106 that is an ohmic electrode formed to contact with the n-type contact layer 103. A transparent electrode 107 and a p-side electrode 108 formed on a portion of the transparent electrode are formed on the other surface of the MQW active layer 104. <P>COPYRIGHT: (C)2007,JPO&INPIT |
| 申请公布号 |
JP2006287212(A) |
申请公布日期 |
2006.10.19 |
| 申请号 |
JP20060059688 |
申请日期 |
2006.03.06 |
| 申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
UEDA TETSUZO;NAKAZAWA TOSHIYUKI;TAKIZAWA TOSHIYUKI |
| 分类号 |
H01L33/06;H01L33/32;H01S5/343 |
主分类号 |
H01L33/06 |
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