| 摘要 |
PROBLEM TO BE SOLVED: To prevent leakage current of a semiconductor device by using a film which consists of a refractory metal, an alloy consisting of a refractory metal, silicide of a refractory metal, and a nitride of a Ti, Ta, W, and Ti-W alloy in a contact barrier layer, a gate electrode, or the like, for obtaining the semiconductor device with high reliability. SOLUTION: In a method for manufacturing the contact barrier of the semiconductor device in which a junction depth of a source-drain region is 0.1 to 0.3μm, or the semiconductor device which has a conductor in which a gate electrode layer consists of Co silicide, a high purity conductive film for the semiconductor device is formed by sputtering method, wherein Al content of this conductor is, by atomic number, 2×10<SP>16</SP>mole/cm<SP>3</SP>or less, content of heavy metal element except Co is 2×10<SP>17</SP>mole/cm<SP>3</SP>or less, and content of alkali metal is 1×10<SP>16</SP>mole/cm<SP>3</SP>or less. COPYRIGHT: (C)2007,JPO&INPIT
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