发明名称 MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a method to improve the microfabrication accuracy over conventional methods as the conductive layer fabrication method wherein a two-layer resist structure which is open to have an eaves-like cross-sectional shape is formed on a top surface of a compound semiconductor. SOLUTION: This method has the processes for forming a lower-level resist layer 210 on the top surface of the semiconductor, forming a water-soluble resin layer 212 on the lower-level resist layer, performing a thermal treatment so that an organic-insoluble bridge layer 211 may be formed between the lower-level resist layer and the water-soluble resin layer, forming a higher-level resist layer 214 on the bridge layer by applying a resist containing a sensitized agent, irradiating an exposure beam to the upper- and lower-level resist layers, forming a higher-level aperture by eliminating some parts on the higher-level resist layer and bridge layer using a developer, forming a lower-level aperture larger than the higher-level aperture by eliminating some parts on the lower-level resist layer using a developer, and fabricating a conductive layer 302 on a top surface of the compound semiconductor through the upper- and lower-level apertures. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006286965(A) 申请公布日期 2006.10.19
申请号 JP20050105227 申请日期 2005.03.31
申请人 FUJITSU LTD 发明人 MAKIYAMA KOZO
分类号 H01L21/28 主分类号 H01L21/28
代理机构 代理人
主权项
地址