| 摘要 |
PROBLEM TO BE SOLVED: To provide a solid state image-capturing element which obtains improved image quality, sensitivity, and electric characteristics through the improvement of a board structure. SOLUTION: An N/P<SP>+</SP>board 1 is used to manufacture a CMOS image sensor 13. The board 1 includes a p-type semiconductor board 2 containing B, and an n-type epitaxial growth layer 3 containing P, which is formed on the semiconductor board 2. A P well 5 containing B is formed in the layer 3 to be closer to the semiconductor board 2. On the surface of the layer 3, photodiodes 8 made of P are formed at a plurality of spots to be independent to each other. Second p-type semiconductor layers 10 are formed continuously to encircle each diode 8 separately, and extend from each STI (Shallow Trench Isolation) 9 along it to reach the surface of the P well 5. The second p-type semiconductor layers 10 are also formed continuously along a chip cut-out part 11, from which the board 1 is cut into a plurality of chips, to extend from the surface of the layer 3 to reach the surface of the P well 5. COPYRIGHT: (C)2007,JPO&INPIT
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