| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor laser which is applicable for a recording optical disc or the like and has a high-kink optical level and high output of low operation current, and to provide its manufacturing method. SOLUTION: An n-type clad layer 103, a GaAs active layer 104, a p-type first clad layer 105, a p-type AlInP etching stop layer 106, a p-type (Al<SB>0.5</SB>Ga<SB>0.5</SB>)<SB>0.5</SB>In<SB>0.5</SB>P second clad layer 108, p-type intermediate layer 109, and p-type cap layer 110, are formed on an n-type GaAs substrate 102 in sequence. After an SiO<SB>2</SB>stripe 113 is formed on the p-type cap layer 110, it is used as a mask; and the p-type second clad layer 108, the p-type intermediate layer 109, and the p-type cap layer 110 are dry-etched by an induction coupled plasma using a mixed gas of SiCl<SB>4</SB>and Ar until the etching reaches the p-type etching stop layer 106, so as to form a ridge-type stripe. COPYRIGHT: (C)2007,JPO&INPIT
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