发明名称 SUBSTRATE WITH THROUGH-ELECTRODE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To obtain a substrate with a through-electrode which has a low electric resistance and a heat resistance and is hard to uncouple from a through-hole. SOLUTION: A three-layer structure of Cu-Cu<SB>3</SB>Sn-Cu<SB>6</SB>Sn<SB>5</SB>is formed by carrying out a heat treatment of a mixed material consisting of Cu powder and Sn powder. An electric resistance is lowered by increasing Cu<SB>3</SB>Sn region, and an electrode material 6 with the heat resistance is made by constituting the three-layer structure. There can be obtained a substrate 50 with the through-electrode in which the electrode material 6 is firmly held by a through-hole 3 by preforming a metal film at an inner wall of the through-hole 3 by a spatter or the like, and by partially alloying the metal film and the electrode material 6. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006287019(A) 申请公布日期 2006.10.19
申请号 JP20050105856 申请日期 2005.04.01
申请人 HITACHI METALS LTD 发明人 NAGATOMO HIROYUKI;FURUICHI SHINJI
分类号 H05K1/11;H01L23/12;H05K1/09;H05K3/38;H05K3/40 主分类号 H05K1/11
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