| 摘要 |
A semiconductor device comprises a semiconductor substrate having a surface of a plane orientation {100}, and a plurality of memory cells formed on the semiconductor substrate. The memory cells each include a capacitor formed in a trench extending from the surface into the semiconductor substrate, and a transistor. The transistor has a first source/drain region connected to the capacitor, a second source/drain region formed apart from the first source/drain region as leaving an interval therebetween and connected to a bit line, and a gate electrode formed over the interval between the first and second source/drain regions and connected to a word line. A transverse section of at least part of the trench is tetragonal. Transverse sections of the trenches in the memory cells are tilted at the substantially same angle against a direction of extension of the word line.
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