发明名称 |
FOUR-BIT FINFET NVRAM MEMORY DEVICE |
摘要 |
A four-bit FinFET memory cell, a method of fabricating a four-bit FinFET memory cell and an NVRAM formed of four-bit FINFET memory cells. The four-bit memory cell including two charge storage regions in opposite ends of a dielectric layer on a first sidewall of a fin of a FinFET and two additional charge storage regions in opposite ends of a dielectric layer on a second sidewall of the fin of the FinFET, the first and second sidewalls being opposite one another.
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申请公布号 |
US2006234456(A1) |
申请公布日期 |
2006.10.19 |
申请号 |
US20060426623 |
申请日期 |
2006.06.27 |
申请人 |
ANDERSON BRENT A;CLARK WILLIAM F JR;NOWAK EDWARD J |
发明人 |
ANDERSON BRENT A.;CLARK WILLIAM F.JR.;NOWAK EDWARD J. |
分类号 |
H01L21/336 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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