发明名称 ARTIFICIAL DIELECTRICS USING NANOSTRUCTURES
摘要 Artificial dielectrics using nanostructures, such as nanowires, are disclosed. In embodiments, artificial dielectrics using other nanostructures, such as nanorods, nanotubes or nanoribbons and the like are disclosed. The artificial dielectric includes a dielectric material with a plurality of nanowires (or other nanostructures) embedded within the dielectric material. Very high dielectric constants can be achieved with an artificial dielectric using nanostructures. The dielectric constant can be adjusted by varying the length, diameter, carrier density, shape, aspect ratio, orientation and density of the nanostructures. Additionally, a controllable artificial dielectric using nanostructures, such as nanowires, is disclosed in which the dielectric constant can be dynamically adjusted by applying an electric field to the controllable artificial dielectric. A wide range of electronic devices can use artificial dielectrics with nanostructures to improve performance. Example devices include, capacitors, thin film transistors, other types of thin film electronic devices, microstrip devices, surface acoustic wave (SAW) filters, other types of filters, and radar attenuating materials (RAM).
申请公布号 CA2580342(A1) 申请公布日期 2006.10.19
申请号 CA20052580342 申请日期 2005.08.16
申请人 NANOSYS, INC. 发明人 LEON, FRANCISCO;PARCE, WALLACE J.;EMPEDOCLES, STEVEN A.;STUMBO, DAVID
分类号 H05B37/00 主分类号 H05B37/00
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