| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a sputtering target for depositing a ruthenium film for contributing the reflection of the exposure light capable of suppressing particles generated from the target during the film deposition, a manufacturing method for a substrate with a multi-layered reflecting film capable of suppressing generation of the particles using the target and less in surface defects, a manufacturing method for a reflection type mask blank, and a manufacturing method for a reflection type mask. <P>SOLUTION: The sputtering target substantially consists of ruthenium (Ru), its sintering density is≥95%, and the content of oxygen (O) and carbon (C) is≤200 ppm, respectively. The mean crystal grain size is≥5 nm and≤1,000 nm. A substrate 30 with a multi-layered reflecting film is obtained by depositing a ruthenium protective film 6 on a multi-layered reflecting film 2 on a substrate 1 by using the target. A reflection type mask blank is obtained by forming an absorbing medium on the ruthenium protective film 6 of the substrate 30 with the multi-layered reflecting film. Further, a reflection type mask is obtained by forming a pattern on the absorbing medium of the reflection type mask blank. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
