| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a high quality high performance semiconductor device in which a wiring capacity and a leakage current are reduced while preventing the drift and diffusion of a wiring material effectively. <P>SOLUTION: An insulating film and a cap film are formed on a substrate and a wiring trench is formed on the film. That trench is formed of a metal barrier film and filled with Cu thus forming an interconnect line. After a recess is formed by removing the upper portion of the interconnect line by over-CMP, a metal barrier film is formed. The metal barrier film is then removed by CMP and left only in that recess. Consequently, a residue of Cu can be eliminated. Thereafter, an upper layer insulating film is formed. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
