发明名称 Semiconductor device for high voltage IC
摘要 A semiconductor device includes: a plurality of transistors connected in series between a ground potential and a predetermined potential; an input terminal provided by a gate terminal of the first step transistor; a plurality of resistors connected in series between the ground potential and the predetermined potential; and an output terminal provided by a predetermined potential side terminal of the Nth step transistor. A gate terminal of each transistor other than the first step transistor is sequentially connected between neighboring two resistors. One of the resistors defined as an Ith step resistor has a resistance, which is smaller than a resistance of a (I+1)th step resistor.
申请公布号 US2006231868(A1) 申请公布日期 2006.10.19
申请号 US20060405399 申请日期 2006.04.18
申请人 DENSO CORPORATION 发明人 YAMADA AKIRA;HIMI HIROAKI;AKAGI NOZOMU;NAGATA JUNICHI
分类号 H01L29/768 主分类号 H01L29/768
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