| 摘要 |
PROBLEM TO BE SOLVED: To prevent a stress migration and an electromigration from deteriorating in a semiconductor device having a barrier film on Cu wiring. SOLUTION: The semiconductor device is equipped with a wiring layer with a conductive film embedded in a wiring groove formed in an insulating film, a barrier film formed on a wiring front surface, and an upper wiring layer formed on the barrier film. Moreover, the insulating film contacts with the barrier film and an amorphous layer containing Si, C is formed between the conductive film and the barrier film. As the affinity of the conductive film and the barrier film is raised by Si and a hole in the amorphous layer is buried with Si, C, an adhesiveness can be improved between the wiring layer and the barrier layer. Consequently, the electromigration tolerance and the stress migration tolerance of the Cu wiring can be improved. COPYRIGHT: (C)2007,JPO&INPIT
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