| 摘要 |
A salicide process is provided. A metal layer selected from a group consisting of titanium, cobalt, platinum, palladium and an alloy thereof is formed over a silicon layer. A first thermal process is performed. Next, a second thermal process is performed, wherein the second thermal process includes a first step performed at 600~700 degrees centigrade for 10~60 seconds and a second step performed at 750~850 degrees centigrade for 10~60 seconds. If the metal layer is selected from a group consisting of nickel and an alloy thereof is formed on a silicon layer, the first step of the second thermal process is performed at 300~400 degrees centigrade for 10~60 seconds and the second step of the second thermal process is performed at 450~550 degrees centigrade for 10~60 seconds.
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