发明名称 |
Methode zur Kalibrierung und Optimierung einer 2-dimensionalen Modellierung von Mustern |
摘要 |
A method for generating a photolithography mask for optically transferring a pattern formed in the mask onto a substrate utilizing an imaging system. The method includes the steps of: (a) defining a set of calibration patterns, which are represented in a data format; (b) printing the calibration patterns on a substrate utilizing the given imaging system; (c) determining a first set of contour patterns corresponding to the calibration patterns imaged on the substrate; (d) generating a system pseudo-intensity function, which approximates the imaging performance of the imaging system; (e) determining a second set of contour patterns by utilizing the system pseudo-intensity function to define how the calibration patterns will be imaged in the substrate; (f) comparing the first set of contour patterns and the second set of contour patterns to determine the difference therebetween; (g) adjusting the system pseudo-intensity function until the difference between the first set of contour patterns and the second set of contour patterns is below a predefined criteria; and (h) utilizing the adjusted system pseudo-intensity function to modify the mask so as to provide for optical proximity correction. <IMAGE> <IMAGE> <IMAGE> |
申请公布号 |
DE60214506(D1) |
申请公布日期 |
2006.10.19 |
申请号 |
DE2002614506 |
申请日期 |
2002.10.09 |
申请人 |
ASML MASKTOOLS B.V. |
发明人 |
LAIDIG, THOMAS;CHEN, JANG FUNG;SHI, XUELONG;HOLLERBACH, UWE;WAMPLER, KURT E. |
分类号 |
G03F7/20;G03F1/00;G03F1/36;H01L21/027 |
主分类号 |
G03F7/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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