| 摘要 |
<p>A memory cell device includes a first electrode, a phase-change material adjacent the first electrode, and a second electrode adjacent the phase-change material. The phase-change material has a sublithographic width defined by a pattern shrink material process, such as RELACS TM or SAFIER TM. In another embodiment of the present invention, a heater adjacent the first electrode has a sublithographic width defined by a pattern shrink material process.</p> |
