GaN-BASED HIGH ELECTRON MOBILITY TRANSISTOR AND METHOD FOR MAKING THE SAME
摘要
<p>A high electron mobility transistor including: a GaN material system based heterostructure; a passivating nitride layer over the heterostructure and defining a plurality of openings; and a plurality of electrical contacts for the heterostructure and formed through the openings.</p>
申请公布号
WO2006110511(A2)
申请公布日期
2006.10.19
申请号
WO2006US12955
申请日期
2006.04.07
申请人
LOCKHEED MARTIN CORPORATION;ZHANG, AN-PING;KRETCHMER, JAMES;KAMINSKY, EDMUND
