Verfahren zur Herstellung eines Siliciumoxidhalbleiterfilms,申请号DE19944408791-传众专利搜索

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发明名称	Verfahren zur Herstellung eines Siliciumoxidhalbleiterfilms
摘要
申请公布号	DE4408791(B4)	申请公布日期	2006.10.19
申请号	DE19944408791	申请日期	1994.03.15
申请人	FUJI ELECTRIC CO. LTD.	发明人	SICHANUGRIST, PORPONTH
分类号	H01L21/205;H01L31/20;H01L31/0232;H01L31/0376;H01L31/0392;H01L31/04;H01L31/075	主分类号	H01L21/205
代理机构		代理人
主权项
地址

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