| 摘要 |
PROBLEM TO BE SOLVED: To obtain a silicon-carbide semiconductor device which simplifies a manufacturing process and comprises a pressure-resistant structure including a high pressure resistance holding function. SOLUTION: The silicon-carbide semiconductor device is formed with a silicon-carbide substrate area 11 comprised of n<SP>+</SP>type silicon carbide; an n<SP>-</SP>type cathode area 12 formed on the silicon-carbide substrate area 11; an anode electrode 13 in contact with a junction interface with the silicon-carbide substrate area 11 in the cathode area 12; a cathode electrode 14 formed on the rear side of the silicon-carbide substrate area 11; an edge protecting area 16 disposed annular in contact with the outer periphery of the anode electrode 13; and a plurality of field buffering area 17 annular disposed concentrically with the anode electrode 13 and the edge protecting area 16 so as not to be in contact with each other. COPYRIGHT: (C)2007,JPO&INPIT |
