| 摘要 |
The invention relates to a method of manufacturing a semiconductor light emitting diode. In the method, an n-type nitride semiconductor layer, an active layer and a p-type nitride semiconductor layer are formed sequentially on a substrate. Then, a nickel oxide (NiO<SUB>x</SUB>) film is directly deposited on the p-type semiconductor layer via reactive sputtering or reactive deposition in an oxidizing atmosphere. Also, a light transmissible conductive oxide layer is formed on the nickel oxide film.
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