| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method or the like capable of creating a reading window or a reading margin more independent of the variations between bits over an arbitrary array, group or block of memory cells. <P>SOLUTION: A voltage derived from accessing a selected bit using one read current may be utilized to read a selected bit of an untriggered phase change memory after the read current is changed. As a result, different reference voltages may be used to sense the state of more resistive versus a less resistive selected cells. The resulting read window or margin may be improved in some embodiments. <P>COPYRIGHT: (C)2007,JPO&INPIT</p> |
