| 摘要 |
PROBLEM TO BE SOLVED: To provide a field effect transistor composed of a GaN-based compound semiconductor in which output power is improved by preventing occurrence of a hysteresis phenomenon in current-voltage characteristics between a source and a drain. SOLUTION: The field effect transistor is composed by successively laminating a buffer layer 2 formed of the GaN-based compound semiconductor, an electron transit layer 3, and an electron supply layer 4 on a substrate 1. An electroluminescent layer 11 is provided on the rear face side of the substrate 1. The buffer layer 2, the electron transit layer 3, and the electron supply layer 4 are irradiated with light from the electroluminescent layer 11 through the substrate 1. COPYRIGHT: (C)2007,JPO&INPIT
|
