| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology which can detect and distinguish the defect or the foreign matter formed on the principal surface of a semiconductor wafer. SOLUTION: A secondary electron detector 126 and a backscattered electron detector 1 detect secondary electron and reflecting electron generated by irradiating an electron beam 110 to the inspection region used as the subject of examination, on the principal surface of the inspected semiconductor wafer 119 placed on a test piece 124 of an electron microscope; and the detection and the distinction for the defect or the foreign matter are performed by detection signal converters 136 and 2, image drawing circuits 138, 139, 3, and 4, a comparison operation circuit 140 and a defect decision treatment circuit 141. COPYRIGHT: (C)2007,JPO&INPIT
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