发明名称 MOLD AND METHOD FOR MANUFACTURING POLYCRYSTALLINE SILICON INGOT USING SAME
摘要 PROBLEM TO BE SOLVED: To provide a mold for inexpensively manufacturing a polycrystalline silicon ingot having a good structure of unidirectional solidification, and a method for manufacturing the polycrystalline silicon using the same. SOLUTION: The mold 1 has a bottom section and a side section, and holds and solidifies silicon melt inside the same. When a certain temperature difference is given between the inside surface of the mold 1 and the outside surface of the mold 1, calorific value Qs<SB>1</SB>per unit time/unit area passing through the side section and calorific value Qb<SB>1</SB>per unit time/unit area passing through the bottom section has the relationship of Qs<SB>1</SB><Qb<SB>1</SB>. COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2006282495(A) 申请公布日期 2006.10.19
申请号 JP20050269668 申请日期 2005.09.16
申请人 KYOCERA CORP 发明人 SAKAI YOHEI;MATSUI HIROSHI;ATOBE JUNICHI
分类号 C01B33/02 主分类号 C01B33/02
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